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PMWD26UN,518

NXP USA Inc.
RoHS
RoHS RoHS compliant
Package 8-TSSOP (0.173, 4.40mm Width)
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Description MOSFET 2N-CH 20V 7.8A 8TSSOP
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Inventory: 2550
Minimum: 1
Total Price: USD $8.99
Unit Price: USD $8.986478
≥1 USD $8.986478
≥10 USD $7.37352
≥100 USD $7.143098
≥500 USD $6.912675
≥1000 USD $6.682253

Technical Details

Physical

Mounting Type Surface Mount
Package / Case 8-TSSOP (0.173, 4.40mm Width)
Surface Mount YES
Transistor Element Material SILICON

Compliance

RoHS Status ROHS3 Compliant

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2005
Series TrenchMOS?
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Terminal Form GULL WING
Reach Compliance Code unknown
Pin Count 8
JESD-30 Code R-PDSO-G8
Qualification Status Not Qualified
Number of Elements 2
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Power - Max 3.1W
FET Type 2 N-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 30m Ω @ 3.5A, 4.5V
Vgs(th) (Max) @ Id 700mV @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 1366pF @ 16V
Current - Continuous Drain (Id) @ 25°C 7.8A
Gate Charge (Qg) (Max) @ Vgs 23.6nC @ 4.5V
Drain to Source Voltage (Vdss) 20V
JEDEC-95 Code MO-153AB
Drain Current-Max (Abs) (ID) 5.2A
Drain-source On Resistance-Max 7800Ohm
DS Breakdown Voltage-Min 20V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
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