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Package 8-SOIC (0.154, 3.90mm Width)
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Description MOSFET 2P-CH 30V 2.3A 8-SOIC
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Inventory: 2775
Minimum: 1
Total Price: USD $0.79
Unit Price: USD $0.79002
≥1 USD $0.79002
≥10 USD $0.648375
≥100 USD $0.627428
≥500 USD $0.607478
≥1000 USD $0.587528

Technical Details

Physical

Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Surface Mount YES
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 1997
Series HEXFET?
JESD-609 Code e0
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Terminal Finish TIN LEAD
Additional Feature HIGH RELIABILITY
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 245
Time@Peak Reflow Temperature-Max (s) 30
JESD-30 Code R-PDSO-G8
Qualification Status Not Qualified
Number of Elements 2
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Power - Max 2W
FET Type 2 P-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 250m Ω @ 1A, 10V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 190pF @ 15V
Current - Continuous Drain (Id) @ 25°C 2.3A
Gate Charge (Qg) (Max) @ Vgs 12nC @ 10V
Drain to Source Voltage (Vdss) 30V
Drain Current-Max (Abs) (ID) 2.3A
Drain-source On Resistance-Max 0.25Ohm
Pulsed Drain Current-Max (IDM) 10A
DS Breakdown Voltage-Min 30V
Avalanche Energy Rating (Eas) 57 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate

Compliance

RoHS Status Non-RoHS Compliant
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