Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2004
Series HEXFET?
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Termination SMD/SMT
Resistance 210mOhm
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Max Power Dissipation 2W
Current Rating 2.1A
Base Part Number IRF7350PBF
Number of Elements 2
Power Dissipation 2W
Power - Max 2W
FET Type N and P-Channel
Rds On (Max) @ Id, Vgs 210mOhm @ 2.1A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 380pF @ 25V
Current - Continuous Drain (Id) @ 25°C 2.1A 1.5A
Gate Charge (Qg) (Max) @ Vgs 28nC @ 10V
Rise Time 13ns
Drain to Source Voltage (Vdss) 100V
Fall Time (Typ) 40 ns
Turn-Off Delay Time 30 ns
Continuous Drain Current (ID) 2.1A
Threshold Voltage 4V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 100V
Dual Supply Voltage 100V
Input Capacitance 380pF
FET Feature Standard
Drain to Source Resistance 480mOhm
Rds On Max 210 mΩ
Nominal Vgs 4 V