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SSM6L16FETE85LF

Toshiba Semiconductor and Storage
RoHS
RoHS RoHS compliant
Package SOT-563, SOT-666
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Description MOSFET N/P-CH 20V 0.18A/0.1A ES6
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Inventory: 138
Minimum: 1
Total Price: USD $0.24
Unit Price: USD $0.24024
≥1 USD $0.24024
≥10 USD $0.185724

Technical Details

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-563, SOT-666
Number of Pins 6

Technical

Operating Temperature 150°C TA
Packaging Tape & Reel (TR)
Published 2014
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Power Dissipation 150mW
Number of Channels 2
Element Configuration Dual
Power Dissipation 150mW
Turn On Delay Time 130 ns
FET Type N and P-Channel
Rds On (Max) @ Id, Vgs 3 Ω @ 10mA, 4V
Vgs(th) (Max) @ Id 1.1V @ 0.1mA
Input Capacitance (Ciss) (Max) @ Vds 9.3pF @ 3V
Drain to Source Voltage (Vdss) 20V
Turn-Off Delay Time 190 ns
Continuous Drain Current (ID) 100mA
Gate to Source Voltage (Vgs) 10V
Drain to Source Breakdown Voltage 20V
FET Feature Standard
Nominal Vgs 1.1 V

Compliance

Radiation Hardening No
RoHS Status RoHS Compliant

Alternative Model

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