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DMC3060LVT-13

Diodes Incorporated
RoHS
RoHS RoHS compliant
Package SOT-23-6 Thin, TSOT-23-6
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Description MOSFET BVDSS: 25V-30V TSOT26
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Technical Details

Supply Chain

Factory Lead Time 22 Weeks

Physical

Mounting Type Surface Mount
Package / Case SOT-23-6 Thin, TSOT-23-6
Surface Mount YES
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
Terminal Finish Matte Tin (Sn)
Terminal Position DUAL
Terminal Form GULL WING
JESD-30 Code R-PDSO-G6
Number of Elements 2
Configuration SEPARATE, 2 ELEMENTS
Operating Mode ENHANCEMENT MODE
Power - Max 830mW
FET Type N and P-Channel Complementary
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 60m Ω @ 3.1A, 10V, 95m Ω @ 2.7A, 10V
Vgs(th) (Max) @ Id 1.8V @ 250μA, 2.1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 395pF 324pF @ 15V
Current - Continuous Drain (Id) @ 25°C 3.6A Ta 2.8A Ta
Gate Charge (Qg) (Max) @ Vgs 11.3nC @ 10V
Drain to Source Voltage (Vdss) 30V
Polarity/Channel Type N-CHANNEL AND P-CHANNEL
Drain Current-Max (Abs) (ID) 3.6A
Drain-source On Resistance-Max 0.06Ohm
DS Breakdown Voltage-Min 30V
FET Technology METAL-OXIDE SEMICONDUCTOR
Power Dissipation-Max (Abs) 1.16W
FET Feature Standard

Compliance

RoHS Status ROHS3 Compliant

Alternative Model

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