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SSM6N61NU,LF

Toshiba Semiconductor and Storage
RoHS
RoHS RoHS compliant
Package 6-WDFN Exposed Pad
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Description MOSFET 2N-CH 20V 4A UDFN
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Inventory: 9063
Minimum: 1
Total Price: USD $0.39
Unit Price: USD $0.38808
≥1 USD $0.38808
≥10 USD $0.328944
≥100 USD $0.228413
≥500 USD $0.178313
≥1000 USD $0.144929

Technical Details

Supply Chain

Factory Lead Time 12 Weeks

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-WDFN Exposed Pad
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2016
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
Max Power Dissipation 2W
Terminal Form NO LEAD
JESD-30 Code S-PDSO-N6
Number of Elements 2
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Power - Max 2W
FET Type 2 N-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 33m Ω @ 4A, 4.5V
Vgs(th) (Max) @ Id 1V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 410pF @ 10V
Gate Charge (Qg) (Max) @ Vgs 3.6nC @ 4.5V
Drain to Source Voltage (Vdss) 20V
Continuous Drain Current (ID) 4A
Drain Current-Max (Abs) (ID) 4A
Drain-source On Resistance-Max 0.033Ohm
DS Breakdown Voltage-Min 20V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate, 1.5V Drive

Compliance

RoHS Status RoHS Compliant

Alternative Model

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