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SIA911ADJ-T1-GE3

Vishay Siliconix
RoHS
RoHS RoHS compliant
Package PowerPAK? SC-70-6 Dual
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Description MOSFET 2P-CH 20V 4.5A SC70-6
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Inventory: 21699
Minimum: 1
Total Price: USD $0.28
Unit Price: USD $0.282293
≥1 USD $0.282293
≥10 USD $0.23142
≥100 USD $0.224438
≥500 USD $0.217455
≥1000 USD $0.210473

Technical Details

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case PowerPAK? SC-70-6 Dual
Number of Pins 6
Weight 28.009329mg
Transistor Element Material SILICON

Supply Chain

Factory Lead Time 14 Weeks

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2015
Series TrenchFET?
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Subcategory Other Transistors
Max Power Dissipation 6.5W
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number SIA911
Pin Count 6
Number of Elements 2
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.8W
Case Connection DRAIN
Turn On Delay Time 15 ns
FET Type 2 P-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 116m Ω @ 2.8A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 345pF @ 10V
Gate Charge (Qg) (Max) @ Vgs 13nC @ 8V
Rise Time 45 ns
Drain to Source Voltage (Vdss) 20V
Fall Time (Typ) 10 ns
Turn-Off Delay Time 20 ns
Continuous Drain Current (ID) 4.5A
Gate to Source Voltage (Vgs) 8V
Drain to Source Breakdown Voltage -20V
Pulsed Drain Current-Max (IDM) 8A
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Standard

Dimensions

Height 750μm
Length 2.05mm
Width 2.05mm

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