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UPA2660T1R-E2-AX

Renesas Electronics America
RoHS
RoHS RoHS compliant
Package 6-PowerWDFN
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Description MOSFET 2N-CH 20V 4A 6SON
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Technical Details

Supply Chain

Factory Lead Time 16 Weeks

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-PowerWDFN
Number of Pins 6

Compliance

Radiation Hardening No
RoHS Status ROHS3 Compliant

Technical

Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2013
JESD-609 Code e4
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish Nickel/Palladium/Gold (Ni/Pd/Au)
Subcategory FET General Purpose Power
Max Power Dissipation 2.3W
Pin Count 6
Turn On Delay Time 12 ns
FET Type 2 N-Channel (Dual)
Rds On (Max) @ Id, Vgs 62m Ω @ 2A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds 330pF @ 10V
Gate Charge (Qg) (Max) @ Vgs 4.5nC @ 10V
Rise Time 6.4ns
Drain to Source Voltage (Vdss) 20V
Fall Time (Typ) 6.6 ns
Turn-Off Delay Time 27 ns
Continuous Drain Current (ID) 4A
Gate to Source Voltage (Vgs) 12V
Drain Current-Max (Abs) (ID) 4A
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate, 2.5V Drive

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