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Package 8-SOIC (0.154, 3.90mm Width)
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Description MOSFET 2N-CH 30V 6.4A/9.7A 8SOIC
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Inventory: 18514
Minimum: 1
Total Price: USD $0.33
Unit Price: USD $0.333165
≥1 USD $0.333165
≥10 USD $0.274313
≥100 USD $0.265335
≥500 USD $0.256358
≥1000 USD $0.248378

Technical Details

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Supplier Device Package 8-SO

Compliance

Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free

Dimensions

Height 1.4986mm
Length 4.9784mm
Width 3.9878mm

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2006
Series HEXFET?
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Resistance 22.6MOhm
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Voltage - Rated DC 30V
Max Power Dissipation 2W
Current Rating 6.4A
Base Part Number IRF7902PBF
Number of Elements 2
Element Configuration Dual
Power Dissipation 2W
Power - Max 1.4W 2W
FET Type 2 N-Channel (Dual)
Rds On (Max) @ Id, Vgs 22.6mOhm @ 6.4A, 10V
Vgs(th) (Max) @ Id 2.25V @ 25μA
Input Capacitance (Ciss) (Max) @ Vds 580pF @ 15V
Current - Continuous Drain (Id) @ 25°C 6.4A 9.7A
Gate Charge (Qg) (Max) @ Vgs 6.9nC @ 4.5V
Rise Time 8.6ns
Drain to Source Voltage (Vdss) 30V
Continuous Drain Current (ID) 9.7A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 30V
Input Capacitance 580pF
FET Feature Logic Level Gate
Drain to Source Resistance 18.7mOhm
Rds On Max 22.6 mΩ
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