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SI1551DL-T1-E3

Vishay Siliconix
RoHS
RoHS RoHS compliant
Package 6-TSSOP, SC-88, SOT-363
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Description MOSFET N/P-CH 20V SC70-6
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Inventory: 80042
Minimum: 1
Total Price: USD $1.56
Unit Price: USD $1.564945
≥1 USD $1.564945
≥10 USD $1.518917
≥100 USD $1.47289
≥500 USD $1.415355

Technical Details

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Number of Pins 6
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2007
Series TrenchFET?
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
Termination SMD/SMT
ECCN Code EAR99
Resistance 1.9Ohm
Terminal Finish MATTE TIN
Subcategory Other Transistors
Max Power Dissipation 270mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number SI1551
Pin Count 6
Number of Elements 2
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 270mW
Turn On Delay Time 23 ns
FET Type N and P-Channel
Rds On (Max) @ Id, Vgs 1.9 Ω @ 290mA, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250μA
Current - Continuous Drain (Id) @ 25°C 290mA 410mA
Gate Charge (Qg) (Max) @ Vgs 1.5nC @ 4.5V
Rise Time 20 ns
Polarity/Channel Type N-CHANNEL AND P-CHANNEL
Fall Time (Typ) 20 ns
Turn-Off Delay Time 8.5 ns
Continuous Drain Current (ID) 300mA
Threshold Voltage 1.5V
Gate to Source Voltage (Vgs) 12V
Drain Current-Max (Abs) (ID) 0.41A
Drain to Source Breakdown Voltage 20V
Dual Supply Voltage 20V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Nominal Vgs 1.5 V

Dimensions

Height 990.6μm
Length 2.1844mm
Width 1.3462mm

Compliance

Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

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