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SI3911DV-T1-E3

Vishay Siliconix
RoHS
RoHS RoHS compliant
Package SOT-23-6 Thin, TSOT-23-6
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Description Trans MOSFET P-CH 20V 1.8A 6-Pin TSOP T/R
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Inventory: 34654
Minimum: 1
Total Price: USD $0.05
Unit Price: USD $0.054458
≥1 USD $0.054458
≥10 USD $0.052856
≥100 USD $0.051254
≥500 USD $0.049252

Technical Details

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-23-6 Thin, TSOT-23-6
Number of Pins 6

Technical

Packaging Cut Tape (CT)
Published 2013
Series TrenchFET?
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Resistance 145mOhm
Terminal Finish Matte Tin (Sn)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Subcategory Other Transistors
Max Power Dissipation 830mW
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number SI3911
Pin Count 6
Number of Elements 2
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 830mW
Turn On Delay Time 12 ns
FET Type 2 P-Channel (Dual)
Rds On (Max) @ Id, Vgs 145m Ω @ 2.2A, 4.5V
Vgs(th) (Max) @ Id 450mV @ 250μA (Min)
Current - Continuous Drain (Id) @ 25°C 1.8A
Gate Charge (Qg) (Max) @ Vgs 7.5nC @ 4.5V
Rise Time 29ns
Drain to Source Voltage (Vdss) 20V
Fall Time (Typ) 29 ns
Turn-Off Delay Time 24 ns
Continuous Drain Current (ID) -2.2A
Gate to Source Voltage (Vgs) 8V
Drain Current-Max (Abs) (ID) 1.8A
DS Breakdown Voltage-Min 20V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate

Compliance

Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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