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SI1958DH-T1-E3

Vishay Siliconix
RoHS
RoHS RoHS compliant
Package 6-TSSOP, SC-88, SOT-363
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Description MOSFET DUAL N-CH 20V(D-S)
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Inventory: 20431
Minimum: 1
Total Price: USD $4.26
Unit Price: USD $4.25733
≥1 USD $4.25733
≥10 USD $3.493245
≥100 USD $3.384518
≥500 USD $3.274793
≥1000 USD $3.166065

Technical Details

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Number of Pins 6
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2013
Series TrenchFET?
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
Termination SMD/SMT
ECCN Code EAR99
Resistance 340mOhm
Terminal Finish MATTE TIN
Subcategory FET General Purpose Powers
Max Power Dissipation 740mW
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number SI1958
Pin Count 6
Number of Elements 2
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 740mW
Turn On Delay Time 8 ns
Power - Max 1.25W
FET Type 2 N-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 205m Ω @ 1.3A, 4.5V
Vgs(th) (Max) @ Id 1.6V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 105pF @ 10V
Gate Charge (Qg) (Max) @ Vgs 3.8nC @ 10V
Rise Time 25ns
Fall Time (Typ) 25 ns
Turn-Off Delay Time 10 ns
Continuous Drain Current (ID) 1.3A
Threshold Voltage 1.6V
Gate to Source Voltage (Vgs) 12V
Drain to Source Breakdown Voltage 20V
Dual Supply Voltage 20V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Nominal Vgs 1.6 V

Compliance

Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

Alternative Model

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