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SI5517DU-T1-E3

Vishay Siliconix
RoHS
RoHS RoHS compliant
Package PowerPAK? ChipFET? Dual
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Description MOSFET N/P-CH 20V 6A CHIPFET
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Technical Details

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case PowerPAK? ChipFET? Dual
Supplier Device Package PowerPAK? ChipFet Dual

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2016
Series TrenchFET?
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Max Power Dissipation 2.3W
Base Part Number SI5517
Number of Channels 2
Turn On Delay Time 8 ns
Power - Max 8.3W
FET Type N and P-Channel
Rds On (Max) @ Id, Vgs 39mOhm @ 4.4A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 520pF @ 10V
Current - Continuous Drain (Id) @ 25°C 6A
Gate Charge (Qg) (Max) @ Vgs 16nC @ 8V
Rise Time 35ns
Drain to Source Voltage (Vdss) 20V
Fall Time (Typ) 55 ns
Turn-Off Delay Time 40 ns
Continuous Drain Current (ID) 4.6A
Gate to Source Voltage (Vgs) 8V
Drain to Source Breakdown Voltage 20V
Input Capacitance 520pF
FET Feature Logic Level Gate
Drain to Source Resistance 72mOhm
Rds On Max 39 mΩ

Compliance

RoHS Status ROHS3 Compliant

Dimensions

Height 750μm
Length 3mm
Width 1.9mm
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