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SI7501DN-T1-E3

Vishay Siliconix
RoHS
RoHS RoHS compliant
Package PowerPAK? 1212-8 Dual
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Description MOSFET N/P-CH 30V 5.4A 1212-8
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Inventory: 5042
Minimum: 1
Total Price: USD $0.55
Unit Price: USD $0.549045
≥1 USD $0.549045
≥10 USD $0.517966
≥100 USD $0.488646
≥500 USD $0.460982
≥1000 USD $0.434896

Technical Details

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case PowerPAK? 1212-8 Dual
Number of Pins 8

Technical

Packaging Cut Tape (CT)
Published 2011
Series TrenchFET?
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Resistance 35mOhm
Terminal Finish Matte Tin (Sn)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Subcategory Other Transistors
Max Power Dissipation 1.6W
Terminal Form C BEND
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number SI7501
Pin Count 8
JESD-30 Code S-XDSO-C5
Number of Elements 2
Operating Mode ENHANCEMENT MODE
Power Dissipation 3.1W
Turn On Delay Time 10 ns
FET Type N and P-Channel, Common Drain
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 35m Ω @ 7.7A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Current - Continuous Drain (Id) @ 25°C 5.4A 4.5A
Gate Charge (Qg) (Max) @ Vgs 14nC @ 10V
Rise Time 20ns
Polarity/Channel Type N-CHANNEL AND P-CHANNEL
Fall Time (Typ) 20 ns
Turn-Off Delay Time 25 ns
Continuous Drain Current (ID) 5.4A
Gate to Source Voltage (Vgs) 25V
Drain Current-Max (Abs) (ID) 4.5A
Drain to Source Breakdown Voltage 30V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate

Compliance

Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

Dimensions

Height 1.04mm
Length 3.05mm
Width 3.05mm

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