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SI7960DP-T1-E3

Vishay Siliconix
RoHS
RoHS RoHS compliant
Package PowerPAK? SO-8 Dual
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Description MOSFET 2N-CH 60V 6.2A PPAK SO-8
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Technical Details

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case PowerPAK? SO-8 Dual
Number of Pins 8
Weight 506.605978mg
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2011
Series TrenchFET?
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Resistance 21mOhm
Terminal Finish Matte Tin (Sn)
Subcategory FET General Purpose Powers
Max Power Dissipation 1.4W
Terminal Form C BEND
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number SI7960
Pin Count 8
JESD-30 Code R-XDSO-C6
Number of Elements 2
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.4W
Case Connection DRAIN
Turn On Delay Time 12 ns
FET Type 2 N-Channel (Dual)
Rds On (Max) @ Id, Vgs 21m Ω @ 9.7A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Current - Continuous Drain (Id) @ 25°C 6.2A
Gate Charge (Qg) (Max) @ Vgs 75nC @ 10V
Rise Time 12 ns
Drain to Source Voltage (Vdss) 60V
Fall Time (Typ) 12 ns
Turn-Off Delay Time 60 ns
Continuous Drain Current (ID) 9.7A
Threshold Voltage 3V
Gate to Source Voltage (Vgs) 20V
Pulsed Drain Current-Max (IDM) 40A
DS Breakdown Voltage-Min 60V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate

Dimensions

Height 1.04mm
Length 4.9mm
Width 5.89mm

Compliance

Radiation Hardening No
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
Lead Free Lead Free

Alternative Model

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