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APTC60AM70T1G

Microsemi Corporation
RoHS
/
Package SP1
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Description Trans MOSFET N-CH 600V 39A 12-Pin Case SP-1
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Technical Details

Physical

Mount Chassis Mount, Screw
Mounting Type Chassis Mount
Package / Case SP1
Number of Pins 1
Transistor Element Material SILICON

Technical

Operating Temperature -40°C~150°C TJ
Packaging Bulk
Published 2007
JESD-609 Code e1
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 12
Terminal Finish TIN SILVER COPPER
Additional Feature AVALANCHE RATED
Subcategory FET General Purpose Power
Max Power Dissipation 250W
Terminal Position UPPER
Terminal Form THROUGH-HOLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code unknown
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 12
Qualification Status Not Qualified
Number of Elements 2
Operating Mode ENHANCEMENT MODE
Power Dissipation 250W
Case Connection ISOLATED
FET Type 2 N-Channel (Half Bridge)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 70m Ω @ 39A, 10V
Vgs(th) (Max) @ Id 3.9V @ 2.7mA
Input Capacitance (Ciss) (Max) @ Vds 7000pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 259nC @ 10V
Drain to Source Voltage (Vdss) 600V
Continuous Drain Current (ID) 39A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.07Ohm
DS Breakdown Voltage-Min 600V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Standard

Compliance

RoHS Status RoHS Compliant
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