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APTM100DU18TG

Microsemi Corporation
RoHS
/
Package SP4
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Description Trans MOSFET N-CH 1KV 43A 20-Pin Case SP-4
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Technical Details

Physical

Mount Chassis Mount, Screw
Mounting Type Chassis Mount
Package / Case SP4
Number of Pins 4
Transistor Element Material SILICON

Technical

Operating Temperature -40°C~150°C TJ
Packaging Bulk
Published 2016
JESD-609 Code e1
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 12
Terminal Finish TIN SILVER COPPER
Additional Feature AVALANCHE RATED
Subcategory FET General Purpose Power
Max Power Dissipation 780W
Terminal Position UPPER
Terminal Form UNSPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code unknown
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 12
Qualification Status Not Qualified
Number of Elements 2
Operating Mode ENHANCEMENT MODE
Power Dissipation 780W
Case Connection ISOLATED
FET Type 2 N-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 210m Ω @ 21.5A, 10V
Vgs(th) (Max) @ Id 5V @ 5mA
Input Capacitance (Ciss) (Max) @ Vds 10400pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 372nC @ 10V
Drain to Source Voltage (Vdss) 1000V 1kV
Continuous Drain Current (ID) 43A
Gate to Source Voltage (Vgs) 30V
DS Breakdown Voltage-Min 1000V
Avalanche Energy Rating (Eas) 3000 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Standard

Compliance

RoHS Status RoHS Compliant
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