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APTM100A40FT1G

Microsemi Corporation
RoHS
/
Package SP1
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Description Trans MOSFET N-CH 1KV 21A 12-Pin Case SP-1
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Technical Details

Physical

Mount Chassis Mount, Screw
Mounting Type Chassis Mount
Package / Case SP1
Number of Pins 1
Transistor Element Material SILICON

Technical

Operating Temperature -40°C~150°C TJ
Packaging Bulk
JESD-609 Code e1
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 12
ECCN Code EAR99
Terminal Finish TIN SILVER COPPER
Additional Feature AVALANCHE RATED
Subcategory FET General Purpose Power
Max Power Dissipation 390W
Terminal Position UPPER
Terminal Form UNSPECIFIED
Pin Count 12
Number of Elements 2
Operating Mode ENHANCEMENT MODE
Power Dissipation 390W
Case Connection ISOLATED
Turn On Delay Time 44 ns
FET Type 2 N-Channel (Half Bridge)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 480m Ω @ 18A, 10V
Vgs(th) (Max) @ Id 5V @ 2.5mA
Input Capacitance (Ciss) (Max) @ Vds 7868pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 305nC @ 10V
Rise Time 40ns
Drain to Source Voltage (Vdss) 1000V 1kV
Fall Time (Typ) 38 ns
Turn-Off Delay Time 150 ns
Continuous Drain Current (ID) 21A
Gate to Source Voltage (Vgs) 30V
Drain-source On Resistance-Max 0.48Ohm
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Standard

Compliance

Radiation Hardening No
RoHS Status RoHS Compliant

Alternative Model

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