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Package SP6
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Description MOSFET 2N-CH 500V 180A SP6
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Technical Details

Supply Chain

Factory Lead Time 22 Weeks

Physical

Mount Chassis Mount, Screw
Mounting Type Chassis Mount
Package / Case SP6
Number of Pins 6
Transistor Element Material SILICON

Technical

Operating Temperature -40°C~150°C TJ
Packaging Bulk
Published 2012
JESD-609 Code e1
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 7
ECCN Code EAR99
Terminal Finish TIN SILVER COPPER
Additional Feature AVALANCHE RATED
Max Power Dissipation 1.25kW
Terminal Position UPPER
Terminal Form UNSPECIFIED
Pin Count 7
JESD-30 Code R-XUFM-X7
Number of Elements 2
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.25kW
Case Connection ISOLATED
Turn On Delay Time 21 ns
Power - Max 1250W
FET Type 2 N-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 20m Ω @ 90A, 10V
Vgs(th) (Max) @ Id 5V @ 10mA
Input Capacitance (Ciss) (Max) @ Vds 28000pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 560nC @ 10V
Rise Time 38ns
Drain to Source Voltage (Vdss) 500V
Fall Time (Typ) 93 ns
Turn-Off Delay Time 75 ns
Continuous Drain Current (ID) 180A
Gate to Source Voltage (Vgs) 30V
DS Breakdown Voltage-Min 500V
Avalanche Energy Rating (Eas) 3000 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Standard

Compliance

Radiation Hardening No
RoHS Status RoHS Compliant
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