Operating Temperature -40°C~150°C TJ
Packaging Bulk
JESD-609 Code e1
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 21
ECCN Code EAR99
Terminal Finish TIN SILVER COPPER
Additional Feature AVALANCHE RATED
Max Power Dissipation 208W
Terminal Position UPPER
Terminal Form UNSPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code unknown
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 21
JESD-30 Code R-XUFM-X21
Qualification Status Not Qualified
Number of Elements 6
Configuration 3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Power Dissipation 208W
Case Connection ISOLATED
FET Type 6 N-Channel (3-Phase Bridge)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 21m Ω @ 35A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 5100pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 200nC @ 10V
Drain to Source Voltage (Vdss) 100V
Continuous Drain Current (ID) 70A
Gate to Source Voltage (Vgs) 30V
Drain-source On Resistance-Max 0.021Ohm
Pulsed Drain Current-Max (IDM) 300A
DS Breakdown Voltage-Min 100V
Avalanche Energy Rating (Eas) 1500 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Standard