Operating Temperature -40°C~150°C TJ
Packaging Bulk
JESD-609 Code e1
Pbfree Code yes
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 15
ECCN Code EAR99
Terminal Finish TIN SILVER COPPER
Additional Feature AVALANCHE RATED
Subcategory FET General Purpose Power
Max Power Dissipation 1.25kW
Terminal Position UPPER
Terminal Form UNSPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 15
JESD-30 Code R-XUFM-X15
Qualification Status Not Qualified
Number of Elements 2
Configuration SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
Operating Mode ENHANCEMENT MODE
Case Connection ISOLATED
Power - Max 1250W
FET Type 2 N-Channel (Half Bridge)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 5m Ω @ 166.5A, 10V
Vgs(th) (Max) @ Id 4V @ 8mA
Input Capacitance (Ciss) (Max) @ Vds 40800pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 1184nC @ 10V
Drain to Source Voltage (Vdss) 200V
Continuous Drain Current (ID) 333A
Drain-source On Resistance-Max 0.005Ohm
Pulsed Drain Current-Max (IDM) 700A
DS Breakdown Voltage-Min 200V
Avalanche Energy Rating (Eas) 1300 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Standard