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SI7940DP-T1-GE3

Vishay Siliconix
RoHS
RoHS RoHS compliant
Package PowerPAK? SO-8 Dual
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Description MOSFET Dual P-Ch 12V 17mohm @ 4.5V
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Technical Details

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case PowerPAK? SO-8 Dual
Number of Pins 8
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2014
Series TrenchFET?
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Terminal Finish MATTE TIN
Subcategory FET General Purpose Powers
Max Power Dissipation 1.4W
Terminal Form C BEND
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number SI7940
Pin Count 8
JESD-30 Code R-XDSO-C6
Number of Elements 2
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.4W
Case Connection DRAIN
Turn On Delay Time 30 ns
FET Type 2 N-Channel (Dual)
Rds On (Max) @ Id, Vgs 17m Ω @ 11.8A, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250μA
Current - Continuous Drain (Id) @ 25°C 7.6A
Gate Charge (Qg) (Max) @ Vgs 17nC @ 4.5V
Rise Time 50ns
Fall Time (Typ) 50 ns
Turn-Off Delay Time 60 ns
Continuous Drain Current (ID) 11.8A
Gate to Source Voltage (Vgs) 8V
Drain Current-Max (Abs) (ID) 7.6A
Drain-source On Resistance-Max 0.017Ohm
Drain to Source Breakdown Voltage 12V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate

Compliance

Radiation Hardening No
RoHS Status ROHS3 Compliant
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