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TPC8208(TE12L,Q,M)

Toshiba Semiconductor and Storage
RoHS
/
Package 8-SOIC (0.173, 4.40mm Width)
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Description MOSFET 2N-CH 20V 5A SOP8
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Inventory: 16421
Minimum: 1
Total Price: USD $0.42
Unit Price: USD $0.42294
≥1 USD $0.42294
≥10 USD $0.34713
≥100 USD $0.336158
≥500 USD $0.326183
≥1000 USD $0.31521

Technical Details

Technical

Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2003
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Power Dissipation 750mW
Base Part Number TPC*208
Power Dissipation 1.5W
Power - Max 450mW
FET Type 2 N-Channel (Dual)
Rds On (Max) @ Id, Vgs 50mOhm @ 2.5A, 4V
Vgs(th) (Max) @ Id 1.2V @ 200μA
Input Capacitance (Ciss) (Max) @ Vds 780pF @ 10V
Current - Continuous Drain (Id) @ 25°C 5A
Gate Charge (Qg) (Max) @ Vgs 9.5nC @ 5V
Rise Time 5ns
Drain to Source Voltage (Vdss) 20V
Fall Time (Typ) 2.7 ns
Continuous Drain Current (ID) 5A
Gate to Source Voltage (Vgs) 12V
Drain to Source Breakdown Voltage 20V
Input Capacitance 780pF
FET Feature Logic Level Gate
Drain to Source Resistance 50mOhm
Rds On Max 50 mΩ

Compliance

RoHS Status RoHS Compliant

Alternative Model

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