Operating Temperature -40°C~150°C TJ
Packaging Bulk
Published 2007
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 12
Additional Feature AVALANCHE RATED
Subcategory FET General Purpose Power
Max Power Dissipation 208W
Terminal Position UPPER
Terminal Form UNSPECIFIED
Reach Compliance Code unknown
Pin Count 12
Qualification Status Not Qualified
Number of Elements 2
Operating Mode ENHANCEMENT MODE
Power Dissipation 208W
Case Connection ISOLATED
FET Type 2 N-Channel (Half Bridge)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 180m Ω @ 21A, 10V
Vgs(th) (Max) @ Id 5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 5448pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 170nC @ 10V
Drain to Source Voltage (Vdss) 500V
Continuous Drain Current (ID) 25A
Gate to Source Voltage (Vgs) 30V
DS Breakdown Voltage-Min 500V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Standard