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SI7958DP-T1-GE3

Vishay Siliconix
RoHS
RoHS RoHS compliant
Package PowerPAK? SO-8 Dual
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Description MOSFET 2N-CH 40V 7.2A PPAK SO-8
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Inventory: 3537
Minimum: 1
Total Price: USD $2.82
Unit Price: USD $2.818935
≥1 USD $2.818935
≥10 USD $2.313203
≥100 USD $2.241383
≥500 USD $2.168565
≥1000 USD $2.096745

Technical Details

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case PowerPAK? SO-8 Dual
Number of Pins 8
Weight 506.605978mg
Transistor Element Material SILICON

Dimensions

Height 1.04mm
Length 4.9mm
Width 5.89mm

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2015
Series TrenchFET?
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Resistance 16.5mOhm
Terminal Finish Matte Tin (Sn)
Subcategory FET General Purpose Power
Max Power Dissipation 1.4W
Terminal Form C BEND
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number SI7958
Pin Count 8
JESD-30 Code R-XDSO-C6
Number of Elements 2
Number of Channels 2
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time 17 ns
FET Type 2 N-Channel (Dual)
Rds On (Max) @ Id, Vgs 16.5m Ω @ 11.3A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Current - Continuous Drain (Id) @ 25°C 7.2A
Gate Charge (Qg) (Max) @ Vgs 75nC @ 10V
Rise Time 17 ns
Fall Time (Typ) 17 ns
Turn-Off Delay Time 66 ns
Continuous Drain Current (ID) 11.3A
Threshold Voltage 3V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 40V
Pulsed Drain Current-Max (IDM) 40A
Avalanche Energy Rating (Eas) 61 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate

Compliance

Radiation Hardening No
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
Lead Free Lead Free

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