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SI6562DQ-T1-GE3

Vishay Siliconix
RoHS
RoHS RoHS compliant
Package 8-TSSOP (0.173, 4.40mm Width)
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Description MOSFET N/P-CH 20V 8-TSSOP
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Inventory: 8115
Minimum: 1
Total Price: USD $0.29
Unit Price: USD $0.294731
≥1 USD $0.294731
≥10 USD $0.286063
≥100 USD $0.277394
≥500 USD $0.266558

Technical Details

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-TSSOP (0.173, 4.40mm Width)
Number of Pins 8

Compliance

Radiation Hardening No
RoHS Status ROHS3 Compliant

Technical

Packaging Cut Tape (CT)
Published 2009
Series TrenchFET?
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Terminal Finish MATTE TIN
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Subcategory Other Transistors
Max Power Dissipation 1W
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number SI6562
Pin Count 8
Number of Elements 2
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 1W
FET Type N and P-Channel
Rds On (Max) @ Id, Vgs 30m Ω @ 4.5A, 4.5V
Vgs(th) (Max) @ Id 600mV @ 250μA (Min)
Gate Charge (Qg) (Max) @ Vgs 25nC @ 4.5V
Rise Time 30ns
Polarity/Channel Type N-CHANNEL AND P-CHANNEL
Fall Time (Typ) 30 ns
Turn-Off Delay Time 57 ns
Continuous Drain Current (ID) 3.5A
Gate to Source Voltage (Vgs) 12V
Drain Current-Max (Abs) (ID) 0.0045A
Drain-source On Resistance-Max 0.03Ohm
Drain to Source Breakdown Voltage 20V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate

Alternative Model

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