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SI6925ADQ-T1-GE3

Vishay Siliconix
RoHS
RoHS RoHS compliant
Package 8-TSSOP (0.173, 4.40mm Width)
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Description MOSFET 2N-CH 20V 3.3A 8-TSSOP
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Inventory: 4564
Minimum: 1
Total Price: USD $0.05
Unit Price: USD $0.050073
≥1 USD $0.050073
≥10 USD $0.0486
≥100 USD $0.047127
≥500 USD $0.045286

Technical Details

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-TSSOP (0.173, 4.40mm Width)
Number of Pins 8
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2016
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Terminal Finish MATTE TIN
Subcategory FET General Purpose Powers
Max Power Dissipation 800mW
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number SI6925
Pin Count 8
Number of Elements 2
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 800mW
Turn On Delay Time 40 ns
FET Type 2 N-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 45m Ω @ 3.9A, 4.5V
Vgs(th) (Max) @ Id 1.8V @ 250μA
Current - Continuous Drain (Id) @ 25°C 3.3A
Gate Charge (Qg) (Max) @ Vgs 6nC @ 4.5V
Rise Time 50ns
Fall Time (Typ) 50 ns
Turn-Off Delay Time 20 ns
Continuous Drain Current (ID) 3.9A
Gate to Source Voltage (Vgs) 12V
Drain Current-Max (Abs) (ID) 3.3A
Drain-source On Resistance-Max 0.045Ohm
Drain to Source Breakdown Voltage 20V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Nominal Vgs 1.8 V

Compliance

Radiation Hardening No
RoHS Status ROHS3 Compliant

Alternative Model

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