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SP8M10FU6TB

ROHM Semiconductor
RoHS
RoHS RoHS compliant
Package 8-SOIC (0.154, 3.90mm Width)
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Description MOSFET N/P-CH 30V 7A/4.5A 8SOIC
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Technical Details

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8

Technical

Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2004
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Subcategory Other Transistors
Max Power Dissipation 2W
Reach Compliance Code unknown
Base Part Number *M10
Operating Mode ENHANCEMENT MODE
Power Dissipation 2W
FET Type N and P-Channel
Rds On (Max) @ Id, Vgs 24m Ω @ 7A, 10V
Vgs(th) (Max) @ Id 2.5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 600pF @ 10V
Current - Continuous Drain (Id) @ 25°C 7A 4.5A
Gate Charge (Qg) (Max) @ Vgs 11.8nC @ 5V
Rise Time 25ns
Polarity/Channel Type N-CHANNEL AND P-CHANNEL
Fall Time (Typ) 25 ns
Turn-Off Delay Time 60 ns
Continuous Drain Current (ID) 4.5A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 7A
Drain to Source Breakdown Voltage 30V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate

Compliance

RoHS Status ROHS3 Compliant

Alternative Model

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