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NVMFD5877NLT3G

ON Semiconductor
RoHS
RoHS RoHS compliant
Package 8-PowerTDFN
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Description MOSFET 2N-CH 60V 6A 8SOIC
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Inventory: 1752
Minimum: 1
Total Price: USD $4.23
Unit Price: USD $4.2294
≥1 USD $4.2294
≥10 USD $3.470303
≥100 USD $3.361575
≥500 USD $3.252848
≥1000 USD $3.145118

Technical Details

Supply Chain

Factory Lead Time 13 Weeks
Lifecycle Status ACTIVE, NOT REC (Last Updated: 10 hours ago)

Technical

Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2011
JESD-609 Code e3
Pbfree Code yes
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Max Power Dissipation 3.2W
Terminal Form FLAT
Pin Count 8
JESD-30 Code R-PDSO-F6
Number of Elements 2
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 23W
Case Connection DRAIN
Turn On Delay Time 8.1 ns
FET Type 2 N-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 39m Ω @ 7.5A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 540pF @ 25V
Current - Continuous Drain (Id) @ 25°C 6A
Gate Charge (Qg) (Max) @ Vgs 20nC @ 10V
Drain to Source Voltage (Vdss) 60V
Turn-Off Delay Time 14.5 ns
Continuous Drain Current (ID) 17A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 6A
Drain-source On Resistance-Max 0.06Ohm
Pulsed Drain Current-Max (IDM) 74A
DS Breakdown Voltage-Min 60V
Avalanche Energy Rating (Eas) 10.5 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate

Dimensions

Height 1.05mm
Length 6.1mm
Width 5.1mm

Compliance

Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

Alternative Model

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