Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2007
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Subcategory FET General Purpose Power
Max Power Dissipation 2.1W
Operating Mode ENHANCEMENT MODE
Power - Max 1.9W 2.1W
FET Type 2 N-Channel (Half Bridge)
Rds On (Max) @ Id, Vgs 11m Ω @ 20A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1380pF @ 15V
Current - Continuous Drain (Id) @ 25°C 11A 12A
Gate Charge (Qg) (Max) @ Vgs 24nC @ 10V
Drain to Source Voltage (Vdss) 30V
Continuous Drain Current (ID) 12A
Drain Current-Max (Abs) (ID) 50A
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate