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IPG20N06S2L50AATMA1

Infineon Technologies
RoHS
RoHS RoHS compliant
Package 8-PowerVDFN
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Description MOSFET N-Ch 55V 20A TDSON-8
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Inventory: 5147
Minimum: 1
Total Price: USD $0.44
Unit Price: USD $0.438318
≥1 USD $0.438318
≥10 USD $0.425427
≥100 USD $0.412535
≥500 USD $0.39642

Technical Details

Supply Chain

Factory Lead Time 10 Weeks

Compliance

RoHS Status ROHS3 Compliant
Lead Free Contains Lead

Technical

Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 1997
Series Automotive, AEC-Q101, OptiMOS?
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Max Power Dissipation 51W
Element Configuration Dual
Power - Max 51W
FET Type 2 N-Channel (Dual)
Rds On (Max) @ Id, Vgs 50mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 2V @ 19μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 560pF @ 25V
Current - Continuous Drain (Id) @ 25°C 20A
Gate Charge (Qg) (Max) @ Vgs 17nC @ 10V
Rise Time 3ns
Drain to Source Voltage (Vdss) 55V
Fall Time (Typ) 10 ns
Turn-Off Delay Time 15 ns
Continuous Drain Current (ID) 20A
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 55V
Drain to Source Breakdown Voltage 55V
Input Capacitance 560pF
FET Feature Logic Level Gate
Drain to Source Resistance 50mOhm
Rds On Max 50 mΩ

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