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SUD50NP04-77P-T4E3

Vishay Siliconix
RoHS
RoHS RoHS compliant
Package TO-252-5, DPak (4 Leads + Tab), TO-252AD
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Description MOSFET N/P-CH 40V 8A TO252-4
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Inventory: 36096
Minimum: 1
Total Price: USD $0.56
Unit Price: USD $0.563588
≥1 USD $0.563588
≥10 USD $0.46284
≥100 USD $0.447878
≥500 USD $0.433913
≥1000 USD $0.41895

Technical Details

Supply Chain

Factory Lead Time 6 Weeks

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-5, DPak (4 Leads + Tab), TO-252AD
Number of Pins 4
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2016
Series TrenchFET?
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Resistance 37mOhm
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Subcategory Other Transistors
Max Power Dissipation 24W
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 3
Number of Elements 2
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 10.8W
Power - Max 10.8W 24W
FET Type N and P-Channel, Common Drain
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 37m Ω @ 5A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 640pF @ 20V
Gate Charge (Qg) (Max) @ Vgs 20nC @ 10V
Rise Time 14ns
Drain to Source Voltage (Vdss) 40V
Polarity/Channel Type N-CHANNEL AND P-CHANNEL
Fall Time (Typ) 10 ns
Turn-Off Delay Time 36 ns
Continuous Drain Current (ID) 8A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 8A
Drain to Source Breakdown Voltage 40V
Pulsed Drain Current-Max (IDM) 35A
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Standard

Compliance

Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

Alternative Model

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