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SI8902EDB-T2-E1

Vishay Siliconix
RoHS
RoHS RoHS compliant
Package 6-MICRO FOOT?CSP
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Description MOSFET 2N-CH 20V 3.9A 6-MFP
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Inventory: 33854
Minimum: 1
Total Price: USD $0.43
Unit Price: USD $0.428925
≥1 USD $0.428925
≥10 USD $0.352118
≥100 USD $0.341145
≥500 USD $0.330173
≥1000 USD $0.3192

Technical Details

Supply Chain

Factory Lead Time 24 Weeks

Physical

Mounting Type Surface Mount
Package / Case 6-MICRO FOOT?CSP
Surface Mount YES
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2012
Series TrenchFET?
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature ESD PROTECTED, ULTRA-LOW RESISTANCE
Subcategory FET General Purpose Power
Terminal Position BOTTOM
Terminal Form BALL
Peak Reflow Temperature (Cel) 260
Reach Compliance Code unknown
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number SI8902
Pin Count 6
JESD-30 Code R-XBGA-B6
Qualification Status Not Qualified
Number of Elements 2
Configuration COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR
Operating Mode ENHANCEMENT MODE
Power - Max 1W
FET Type 2 N-Channel (Dual) Common Drain
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 1V @ 980μA
Current - Continuous Drain (Id) @ 25°C 3.9A
Drain to Source Voltage (Vdss) 20V
Drain Current-Max (Abs) (ID) 3.9A
Drain-source On Resistance-Max 0.072Ohm
DS Breakdown Voltage-Min 20V
FET Technology METAL-OXIDE SEMICONDUCTOR
Power Dissipation-Max (Abs) 1.7W
FET Feature Logic Level Gate

Compliance

RoHS Status ROHS3 Compliant

Alternative Model

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