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IPG20N06S4L11ATMA1

Infineon Technologies
RoHS
RoHS RoHS compliant
Package 8-PowerVDFN
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Description IPG20N06S4L Series 60 V 11.2 mOhm OptiMOS?-T2 Power-Transistor - PG-TDSON-8-4
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Inventory: 2034
Minimum: 1
Total Price: USD $5.81
Unit Price: USD $5.806448
≥1 USD $5.806448
≥10 USD $4.765058
≥100 USD $4.615433
≥500 USD $4.466805
≥1000 USD $4.318178

Technical Details

Supply Chain

Factory Lead Time 12 Weeks

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerVDFN
Number of Pins 8
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2003
Series Automotive, AEC-Q101, OptiMOS?
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Terminal Finish Tin (Sn)
Additional Feature LOGIC LEVEL COMPATIBLE
Max Power Dissipation 65W
Terminal Form FLAT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 2
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 11 ns
Power - Max 65W
FET Type 2 N-Channel (Dual)
Rds On (Max) @ Id, Vgs 11.2m Ω @ 17A, 10V
Vgs(th) (Max) @ Id 2.2V @ 28μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 4020pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 53nC @ 10V
Rise Time 3ns
Fall Time (Typ) 19 ns
Turn-Off Delay Time 58 ns
Continuous Drain Current (ID) 20A
Gate to Source Voltage (Vgs) 16V
Max Dual Supply Voltage 60V
Drain-source On Resistance-Max 0.0112Ohm
Avalanche Energy Rating (Eas) 165 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate

Compliance

RoHS Status ROHS3 Compliant
Lead Free Contains Lead

Alternative Model

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