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SI4808DY-T1-E3

Vishay Siliconix
RoHS
RoHS RoHS compliant
Package 8-SOIC (0.154, 3.90mm Width)
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Description MOSFET 2N-CH 30V 5.7A 8SOIC
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Technical Details

Supply Chain

Factory Lead Time 13 Weeks

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Weight 506.605978mg
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2005
Series LITTLE FOOT?
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Subcategory FET General Purpose Power
Max Power Dissipation 1.1W
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 8
Number of Elements 2
Number of Channels 2
Operating Mode ENHANCEMENT MODE
Power Dissipation 2W
Turn On Delay Time 8 ns
FET Type 2 N-Channel (Dual)
Rds On (Max) @ Id, Vgs 22m Ω @ 7.5A, 10V
Vgs(th) (Max) @ Id 800mV @ 250μA (Min)
Gate Charge (Qg) (Max) @ Vgs 20nC @ 10V
Rise Time 10ns
Drain to Source Voltage (Vdss) 30V
Fall Time (Typ) 10 ns
Turn-Off Delay Time 21 ns
Continuous Drain Current (ID) 5.7A
Gate to Source Voltage (Vgs) 20V
DS Breakdown Voltage-Min 30V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate

Dimensions

Height 1.55mm
Length 5mm
Width 4mm

Compliance

Radiation Hardening No
RoHS Status ROHS3 Compliant

Alternative Model

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