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RoHS
RoHS RoHS compliant
Package 8-DIP (0.300, 7.62mm)
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Description MOSFET 3N-CH 600V 0.08A 8DIP
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Technical Details

Supply Chain

Factory Lead Time 16 Weeks

Physical

Mount Through Hole
Mounting Type Through Hole
Package / Case 8-DIP (0.300, 7.62mm)
Transistor Element Material SILICON

Technical

Operating Temperature -20°C~125°C TJ
Packaging Tube
Published 2010
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Max Power Dissipation 1.3W
Terminal Position DUAL
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 8
JESD-30 Code R-PDIP-T8
Number of Elements 3
Configuration COMMON GATE, 3 ELEMENTS WITH BUILT-IN RESISTOR
Operating Mode ENHANCEMENT MODE
Power - Max 1.3W
FET Type 3 N-Channel, Common Gate
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 190 Ω @ 10mA, 10V
Vgs(th) (Max) @ Id 1.2V @ 250μA
Drain to Source Voltage (Vdss) 600V
Continuous Drain Current (ID) 80mA
Drain Current-Max (Abs) (ID) 0.08A
DS Breakdown Voltage-Min 600V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Standard

Compliance

RoHS Status ROHS3 Compliant
Lead Free Lead Free
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