Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2009
Series GigaMOS?, HiPerFET?, TrenchT2?
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Terminal Finish TIN SILVER COPPER
Additional Feature UL RECOGNIZED, AVALANCHE RATED
Subcategory FET General Purpose Power
Max Power Dissipation 180W
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number FMM
Pin Count 5
Qualification Status Not Qualified
Number of Elements 2
Configuration SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Case Connection ISOLATED
Power - Max 180W
FET Type 2 N-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 20m Ω @ 55A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 8600pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 150nC @ 10V
Drain to Source Voltage (Vdss) 150V
Continuous Drain Current (ID) 53A
Drain-source On Resistance-Max 0.02Ohm
Pulsed Drain Current-Max (IDM) 300A
Avalanche Energy Rating (Eas) 800 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Standard