Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2013
Series FASTIRFET?
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Subcategory FET General Purpose Power
Max Power Dissipation 63W
Number of Elements 2
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Case Connection SOURCE
Power - Max 31W 63W
FET Type 2 N-Channel (Dual), Schottky
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 3.2m Ω @ 30A, 10V
Vgs(th) (Max) @ Id 2.1V @ 35μA
Input Capacitance (Ciss) (Max) @ Vds 1314pF @ 13V
Current - Continuous Drain (Id) @ 25°C 64A 188A
Gate Charge (Qg) (Max) @ Vgs 15nC @ 4.5V
Drain to Source Voltage (Vdss) 25V
Continuous Drain Current (ID) 188A
Threshold Voltage 1.6V
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 45A
Drain-source On Resistance-Max 0.0046Ohm
Avalanche Energy Rating (Eas) 61 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate