Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2009
Series CoolMOS?
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature AVALANCHE RATED
Subcategory FET General Purpose Power
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 5
Qualification Status Not Qualified
Number of Elements 2
Configuration COMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Power Dissipation 480W
Case Connection ISOLATED
FET Type 2 N-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 45m Ω @ 44A, 10V
Vgs(th) (Max) @ Id 3.9V @ 3mA
Input Capacitance (Ciss) (Max) @ Vds 6800pF @ 100V
Gate Charge (Qg) (Max) @ Vgs 190nC @ 10V
Rise Time 20ns
Drain to Source Voltage (Vdss) 600V
Fall Time (Typ) 10 ns
Turn-Off Delay Time 100 ns
Continuous Drain Current (ID) 47A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 600V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Super Junction