Operating Temperature -40°C~150°C TJ
Packaging Bulk
Published 2012
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 21
ECCN Code EAR99
Terminal Finish TIN SILVER COPPER
Additional Feature AVALANCHE RATED
Max Power Dissipation 208W
Terminal Position UPPER
Terminal Form UNSPECIFIED
Pin Count 21
JESD-30 Code R-XUFM-X21
Number of Elements 6
Configuration 3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Power Dissipation 208W
Case Connection ISOLATED
Turn On Delay Time 35 ns
FET Type 6 N-Channel (3-Phase Bridge)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 21m Ω @ 35A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 5100pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 200nC @ 10V
Rise Time 70ns
Drain to Source Voltage (Vdss) 100V
Fall Time (Typ) 125 ns
Turn-Off Delay Time 95 ns
Continuous Drain Current (ID) 70A
Gate to Source Voltage (Vgs) 30V
Drain-source On Resistance-Max 0.021Ohm
Pulsed Drain Current-Max (IDM) 300A
DS Breakdown Voltage-Min 100V
Avalanche Energy Rating (Eas) 1500 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Standard