Operating Temperature -40°C~150°C TJ
Packaging Tray
Published 2012
Series CoolMOS?
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 20
ECCN Code EAR99
Max Power Dissipation 462W
Terminal Position UPPER
Terminal Form UNSPECIFIED
JESD-30 Code R-XUFM-X20
Number of Elements 4
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 21 ns
FET Type 4 N-Channel (H-Bridge)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 24m Ω @ 47.5A, 10V
Vgs(th) (Max) @ Id 3.9V @ 5mA
Input Capacitance (Ciss) (Max) @ Vds 14400pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 300nC @ 10V
Rise Time 30ns
Drain to Source Voltage (Vdss) 600V
Fall Time (Typ) 45 ns
Turn-Off Delay Time 100 ns
Continuous Drain Current (ID) 95A
Gate to Source Voltage (Vgs) 20V
Pulsed Drain Current-Max (IDM) 260A
DS Breakdown Voltage-Min 600V
Avalanche Energy Rating (Eas) 1900 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Super Junction