Operating Temperature -40°C~150°C TJ
Packaging Bulk
Published 1997
Series CoolMOS?
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 14
Terminal Finish TIN SILVER COPPER
Additional Feature AVALANCHE RATED
Subcategory FET General Purpose Power
Max Power Dissipation 250W
Terminal Position UPPER
Terminal Form UNSPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 14
Qualification Status Not Qualified
Number of Elements 4
Operating Mode ENHANCEMENT MODE
Power Dissipation 250W
Case Connection ISOLATED
Turn On Delay Time 21 ns
FET Type 4 N-Channel (H-Bridge)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 70m Ω @ 39A, 10V
Vgs(th) (Max) @ Id 3.9V @ 2.7mA
Input Capacitance (Ciss) (Max) @ Vds 7000pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 259nC @ 10V
Rise Time 30ns
Drain to Source Voltage (Vdss) 600V
Fall Time (Typ) 84 ns
Turn-Off Delay Time 283 ns
Continuous Drain Current (ID) 39A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.07Ohm
Pulsed Drain Current-Max (IDM) 156A
DS Breakdown Voltage-Min 600V
Avalanche Energy Rating (Eas) 1800 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Standard