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IPG20N06S3L-23

Infineon Technologies
RoHS
/
Package 8-PowerVDFN
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Description MOSFET 2N-CH 55V 20A TDSON-8
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Technical Details

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerVDFN
Number of Pins 8
Transistor Element Material SILICON

Compliance

RoHS Status RoHS Compliant

Technical

Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2008
Series OptiMOS?
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Terminal Finish MATTE TIN
Additional Feature LOGIC LEVEL COMPATIBLE
Subcategory FET General Purpose Power
Max Power Dissipation 45W
Terminal Form FLAT
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number *PG20N06
Pin Count 8
JESD-30 Code R-PDSO-F6
Qualification Status Not Qualified
Number of Elements 2
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 45W
Case Connection DRAIN
FET Type 2 N-Channel (Dual)
Rds On (Max) @ Id, Vgs 23m Ω @ 16A, 10V
Vgs(th) (Max) @ Id 2.2V @ 20μA
Input Capacitance (Ciss) (Max) @ Vds 2950pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 42nC @ 10V
Rise Time 35ns
Drain to Source Voltage (Vdss) 55V
Fall Time (Typ) 75 ns
Turn-Off Delay Time 40 ns
Continuous Drain Current (ID) 20A
Gate to Source Voltage (Vgs) 16V
Drain Current-Max (Abs) (ID) 33A
Drain-source On Resistance-Max 0.023Ohm
Drain to Source Breakdown Voltage 55V
Avalanche Energy Rating (Eas) 110 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
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