Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2004
Series HEXFET?
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Subcategory Other Transistors
Max Power Dissipation 2W
Terminal Form GULL WING
Base Part Number IRF9362PBF
Number of Elements 2
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 2W
Turn On Delay Time 5.2 ns
FET Type 2 P-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 21m Ω @ 8A, 10V
Vgs(th) (Max) @ Id 2.4V @ 25μA
Input Capacitance (Ciss) (Max) @ Vds 1300pF @ 25V
Current - Continuous Drain (Id) @ 25°C 8A
Gate Charge (Qg) (Max) @ Vgs 39nC @ 10V
Rise Time 5.9 ns
Drain to Source Voltage (Vdss) 30V
Fall Time (Typ) 53 ns
Turn-Off Delay Time 115 ns
Continuous Drain Current (ID) -8A
Threshold Voltage -1.8V
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 8A
Drain to Source Breakdown Voltage -30V
Pulsed Drain Current-Max (IDM) 64A
Avalanche Energy Rating (Eas) 94 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR
Recovery Time 48 ns
FET Feature Logic Level Gate
Nominal Vgs -1.8 V