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IRF8910GTRPBF

Infineon Technologies
RoHS
/
Package 8-SOIC (0.154, 3.90mm Width)
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Description MOSFET 2N-CH 20V 10A 8-SOIC
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Inventory: 261
Minimum: 1
Total Price: USD $0.15
Unit Price: USD $0.150284
≥1 USD $0.150284
≥10 USD $0.145864
≥100 USD $0.141444
≥500 USD $0.135919

Technical Details

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Transistor Element Material SILICON

Dimensions

Height 1.4986mm
Length 4.9784mm
Width 3.9878mm

Compliance

Radiation Hardening No
RoHS Status RoHS Compliant

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2005
Series HEXFET?
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Max Power Dissipation 2W
Terminal Form GULL WING
Base Part Number IRF8910GPBF
Number of Elements 1
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 2W
Turn On Delay Time 6.2 ns
FET Type 2 N-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 13.4m Ω @ 10A, 10V
Vgs(th) (Max) @ Id 2.55V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 960pF @ 10V
Gate Charge (Qg) (Max) @ Vgs 11nC @ 4.5V
Rise Time 10ns
Fall Time (Typ) 4.1 ns
Turn-Off Delay Time 9.7 ns
Continuous Drain Current (ID) 10A
JEDEC-95 Code MS-012AA
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.0134Ohm
Drain to Source Breakdown Voltage 20V
Avalanche Energy Rating (Eas) 19 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
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