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IRF8910GPBF

Infineon Technologies
RoHS
/
Package 8-SOIC (0.154, 3.90mm Width)
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Description MOSFET 2N-CH 20V 10A 8-SO
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Inventory: 307
Minimum: 1
Total Price: USD $0.42
Unit Price: USD $0.423938
≥1 USD $0.423938
≥10 USD $0.348128
≥100 USD $0.337155
≥500 USD $0.326183
≥1000 USD $0.31521

Technical Details

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Supplier Device Package 8-SO

Dimensions

Height 1.4986mm
Width 3.9878mm

Compliance

Radiation Hardening No
RoHS Status RoHS Compliant

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2009
Series HEXFET?
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Max Power Dissipation 2W
Base Part Number IRF8910GPBF
Number of Elements 2
Element Configuration Dual
Power Dissipation 2W
Turn On Delay Time 6.2 ns
Power - Max 2W
FET Type 2 N-Channel (Dual)
Rds On (Max) @ Id, Vgs 13.4mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 2.55V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 960pF @ 10V
Current - Continuous Drain (Id) @ 25°C 10A
Gate Charge (Qg) (Max) @ Vgs 11nC @ 4.5V
Rise Time 10ns
Drain to Source Voltage (Vdss) 20V
Fall Time (Typ) 4.1 ns
Turn-Off Delay Time 9.7 ns
Continuous Drain Current (ID) 10A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 20V
Input Capacitance 960pF
FET Feature Logic Level Gate
Drain to Source Resistance 18.3mOhm
Rds On Max 13.4 mΩ

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