Rds On (Max) @ Id, Vgs 34mOhm @ 6A, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 640pF @ 9V
Current - Continuous Drain (Id) @ 25°C 6.3A 3A
Gate Charge (Qg) (Max) @ Vgs 8.6nC @ 4.5V
Drain to Source Voltage (Vdss) 12V
Continuous Drain Current (ID) 3A
Gate to Source Voltage (Vgs) 8V
Drain to Source Breakdown Voltage 12V
Input Capacitance 640pF
FET Feature Logic Level Gate
Drain to Source Resistance 34mOhm
Rds On Max 34 mΩ
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2004
Series HEXFET?
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Max Power Dissipation 2W
Base Part Number IRF7338PBF
Number of Elements 2
Power Dissipation 2W
Power - Max 2W
FET Type N and P-Channel