Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2010
Series HEXFET?
Part Status Obsolete
Moisture Sensitivity Level (MSL) 2 (1 Year)
Termination SMD/SMT
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Max Power Dissipation 960mW
Base Part Number IRF5852PBF
Number of Elements 2
Element Configuration Dual
Power Dissipation 960mW
Turn On Delay Time 6.6 ns
Power - Max 960mW
FET Type 2 N-Channel (Dual)
Rds On (Max) @ Id, Vgs 90mOhm @ 2.7A, 4.5V
Vgs(th) (Max) @ Id 1.25V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 400pF @ 15V
Current - Continuous Drain (Id) @ 25°C 2.7A
Gate Charge (Qg) (Max) @ Vgs 6nC @ 4.5V
Rise Time 1.2ns
Drain to Source Voltage (Vdss) 20V
Fall Time (Typ) 2.4 ns
Turn-Off Delay Time 15 ns
Continuous Drain Current (ID) 2.7A
Threshold Voltage 1.25V
Gate to Source Voltage (Vgs) 12V
Drain to Source Breakdown Voltage 20V
Dual Supply Voltage 20V
Input Capacitance 400pF
FET Feature Logic Level Gate
Drain to Source Resistance 90mOhm
Rds On Max 90 mΩ
Nominal Vgs 1.25 V