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SI1988DH-T1-GE3

Vishay Siliconix
RoHS
RoHS RoHS compliant
Package 6-TSSOP, SC-88, SOT-363
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Description MOSFET 2N-CH 20V 1.3A SC-70-6
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Inventory: 1042
Minimum: 1
Total Price: USD $0.04
Unit Price: USD $0.040031
≥1 USD $0.040031
≥10 USD $0.038854
≥100 USD $0.037676
≥500 USD $0.036205

Technical Details

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Number of Pins 6
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2011
Series TrenchFET?
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Terminal Finish PURE MATTE TIN
Max Power Dissipation 1.25W
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Base Part Number SI1988
Pin Count 6
Number of Elements 2
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 8 ns
FET Type 2 N-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 168m Ω @ 1.4A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 110pF @ 10V
Gate Charge (Qg) (Max) @ Vgs 4.1nC @ 8V
Rise Time 20ns
Drain to Source Voltage (Vdss) 20V
Fall Time (Typ) 10 ns
Turn-Off Delay Time 15 ns
Continuous Drain Current (ID) 1.3A
Gate to Source Voltage (Vgs) 8V
DS Breakdown Voltage-Min 20V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate

Compliance

Radiation Hardening No
RoHS Status ROHS3 Compliant

Alternative Model

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