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SI3588DV-T1-GE3

Vishay Siliconix
RoHS
RoHS RoHS compliant
Package SOT-23-6 Thin, TSOT-23-6
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Description MOSFET 20V 3.0/2.2A 1.15W 128/300mohm @ 1.8V
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Inventory: 5987
Minimum: 1
Total Price: USD $2.82
Unit Price: USD $2.818935
≥1 USD $2.818935
≥10 USD $2.313203
≥100 USD $2.241383
≥500 USD $2.168565
≥1000 USD $2.096745

Technical Details

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-23-6 Thin, TSOT-23-6
Number of Pins 6
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2013
Series TrenchFET?
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Terminal Finish PURE MATTE TIN
Subcategory Other Transistors
Max Power Dissipation 830mW
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Base Part Number SI3588
Pin Count 6
Number of Elements 2
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 830mW
Power - Max 830mW 83mW
FET Type N and P-Channel
Rds On (Max) @ Id, Vgs 80m Ω @ 3A, 4.5V
Vgs(th) (Max) @ Id 450mV @ 250μA (Min)
Current - Continuous Drain (Id) @ 25°C 2.5A 570mA
Gate Charge (Qg) (Max) @ Vgs 7.5nC @ 4.5V
Polarity/Channel Type N-CHANNEL AND P-CHANNEL
Continuous Drain Current (ID) 2.5A
Threshold Voltage 450mV
Gate to Source Voltage (Vgs) 8V
Drain-source On Resistance-Max 0.08Ohm
Drain to Source Breakdown Voltage 20V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Nominal Vgs 450 mV

Compliance

Radiation Hardening No
REACH SVHC Unknown
RoHS Status ROHS3 Compliant

Alternative Model

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